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this is information on a product in full production. june 2012 doc id15685 rev 3 1/19 19 stf13n95k3, stfi13n95k3, STP13N95K3, stw13n95k3 n-channel 950 v, 0.68 ? typ., 10 a zener-protected supermesh3? power mosfet in to-220fp, i 2 pakfp, to-220 and to-247 datasheet ? production data features gate charge minimized extremely large avalanche performance 100% avalanche tested very low intrinsic capacitance zener-protected applications switching applications description these supermesh3? power mosfets are the result of improvements applied to stmicroelectronics? supermesh? technology, combined with a new optimized vertical structure. these devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. figure 1. internal schematic diagram order codes v dss r ds(on) max i d p tot stf13n95k3 950 v < 0.85 ? 10 a 40 w stfi13n95k3 STP13N95K3 190 w stw13n95k3 to-220 to-247 to-220fp pakfp i 2 ta b 1 3 2 d(2 or tab) g(1) s(3) am01476v1 table 1. device summary order codes marking package packaging stf13n95k3 13n95k3 to-220fp tube stfi13n95k3 i 2 pakfp STP13N95K3 to-220 stw13n95k3 to-247 www.st.com
contents stf13n95k3, stfi13n95k3, STP13N95K3, stw13n95k3 2/19 doc id15685 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
stf13n95k3, stfi13n95k3, STP13N95K3, stw13n95k3 electrical ratings doc id15685 rev 3 3/19 1 electrical ratings . table 2. absolute maximum ratings symbol parameter value unit to-220 to-247 to-220fp i 2 pa k fp v ds drain source voltage 950 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 10 10 (1) 1. limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 6 6 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 40 40 (1) a p tot total dissipation at t c = 25 c 190 40 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 13 a e as single pulse avalanche energy (starting t j = 25 c, i d =i as , v dd = 50 v) 400 mj v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; tc = 25 c) 2500 v dv/dt (3) 3. i sd 10 a, di/dt 400 a/s, v peak v (br)dss. peak diode recovery voltage slope 9 v/ns t j t stg operating junction temperature storage temperature - 55 to 150 c table 3. thermal data symbol parameter value unit to-220 to-247 to-220fp i 2 pakfp rthj-case thermal resistance junction-case max 0.66 3.13 c/w rthj-amb thermal resistance junction-amb max 62.5 50 62.5 c/w
electrical characteristics stf13n95k3, stfi13n95k3, STP13N95K3, stw13n95k3 4/19 doc id15685 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 950 v i dss zero gate voltage drain current (v gs = 0) v ds = 950v, v ds = 950v, tc=125 c 1 50 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 5 a 0.68 0.85 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =100 v, f=1 mhz, v gs =0 - 1620 - pf c oss output capacitance 117 pf c rss reverse transfer capacitance 1.2 pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 760 v -115- pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -131- pf r g intrinsic gate resistance f = 1mhz open drain - 2.3 - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 760 v, i d = 10 a v gs =10 v (see figure 20 ) - 51 10 30 - nc nc nc
stf13n95k3, stfi13n95k3, STP13N95K3, stw13n95k3 electrical characteristics doc id15685 rev 3 5/19 the built-in-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 475 v, i d = 5 a, r g =4.7 ? , v gs =10 v (see figure 22 ) - 18 16 50 21 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm source-drain current source-drain current (pulsed) - 10 40 ma a v sd (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 10 a, v gs =0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 10 a, v dd = 60 v di/dt = 100 a/s, (see figure 21 ) - 500 9 36 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 10 a,v dd = 60 v di/dt=100 a/s, tj=150 c (see figure 21 ) - 624 11 37 ns c a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs 1ma, (open drain) 30 - v
electrical characteristics stf13n95k3, stfi13n95k3, STP13N95K3, stw13n95k3 6/19 doc id15685 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220fp and i 2 pakfp figure 3. thermal impedance for to-220fp and i 2 pakfp figure 4. safe operating area for to-220 figure 5. thermal impedance for to-220 figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 ) $ 6 $3 6 ! /perationinthisareais ,imitedbymax2$3on ?s ?s ms ms 4j?# 4c?# 3ingle pulse !-v ) $ 6 $3 6 ! /perationinthisareais ,imitedbymax2 $3on ?s ?s ms ms 4j?# 4c?# 3ingle pulse !-v ) $ 6 $3 6 ! /perationinthisareais ,imitedbymax2 $3on ?s ?s ms ms 4j?# 4c?# 3ingle pulse !-v
stf13n95k3, stfi13n95k3, STP13N95K3, stw13n95k3 electrical characteristics doc id15685 rev 3 7/19 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on-resistance figure 12. capacitance variations figure 13. output capacitance stored energy ) $ 6 $3 6 ! 6 6 6 6 '3 6 !-v ) $ 6 '3 6 ! 6 $3 6 !-v 6 '3 1 g n# 6 6 $$ 6 ) $ ! 6 $3 6 $3 6 !-v 2 $3on ) $ ! /hm 6 '3 6 !-v # 6 $3 6 p& #iss #oss #rss !-v % oss 6 $3 6 ?* !-v
electrical characteristics stf13n95k3, stfi13n95k3, STP13N95K3, stw13n95k3 8/19 doc id15685 rev 3 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized b vdss vs temperature figure 18. maximum avalanche energy vs starting tj 6 '3th 4 * ?# norm !-v 2 $3on 4 * ?# norm !-v 6 3$ ) 3$ ! 6 4 * ?# 4 * ?# 4 * ?# !-v "6 $33 4 * ?# norm !-v % !3 4 * ?# m* ) $ ! 6 $$ 6 !-v
stf13n95k3, stfi13n95k3, STP13N95K3, stw13n95k3 test circuits doc id15685 rev 3 9/19 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive waveform figure 24. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data stf13n95k3, stfi13n95k3, STP13N95K3, stw13n95k3 10/19 doc id15685 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack ? is an st trademark.
stf13n95k3, stfi13n95k3, STP13N95K3, stw13n95k3 package mechanical data doc id15685 rev 3 11/19 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package mechanical data stf13n95k3, stfi13n95k3, STP13N95K3, stw13n95k3 12/19 doc id15685 rev 3 figure 25. to-220fp drawing 7012510_rev_k_b
stf13n95k3, stfi13n95k3, STP13N95K3, stw13n95k3 package mechanical data doc id15685 rev 3 13/19 table 10. i 2 pakfp mechanical data figure 26. i 2 pakfp drawing dim. mm min. typ. max. a4.40 - 4.60 b2.50 2.70 d2.50 2.75 d1 0.65 0.85 e0.45 0.70 f0.75 1.00 f1 1.20 g4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.30 7.50 rev!
package mechanical data stf13n95k3, stfi13n95k3, STP13N95K3, stw13n95k3 14/19 doc id15685 rev 3 table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
stf13n95k3, stfi13n95k3, STP13N95K3, stw13n95k3 package mechanical data doc id15685 rev 3 15/19 figure 27. to-220 type a drawing 00159 88 _typea_rev_ s
package mechanical data stf13n95k3, stfi13n95k3, STP13N95K3, stw13n95k3 16/19 doc id15685 rev 3 table 12. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
stf13n95k3, stfi13n95k3, STP13N95K3, stw13n95k3 package mechanical data doc id15685 rev 3 17/19 figure 28. to-247 drawing 0075 3 25_g
revision history stf13n95k3, stfi13n95k3, STP13N95K3, stw13n95k3 18/19 doc id15685 rev 3 5 revision history table 13. document revision history date revision changes 15-may-2009 1 first release. 02-sep-2010 2 document status promoted from preliminary data to datasheet. 21-jun-2012 3 added new device in i2pakfp. table 1: device summary , table 2: absolute maximum ratings , table 3: thermal data , figure 2: safe operating area for to- 220fp and i 2 pakfp , figure 3: thermal impedance for to- 220fp and i 2 pakfp have been modified accordingly. table 10: i 2 pakfp mechanical data and figure 26: i 2 pakfp drawing have been added.
stf13n95k3, stfi13n95k3, STP13N95K3, stw13n95k3 doc id15685 rev 3 19/19 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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